參數(shù)資料
型號(hào)： 5962R9858301VXA
廠商： Aeroflex Inc.
英文描述： 20MHz 16-bit Microcontroller
中文描述： 20MHz的16位微控制器
文件頁(yè)數(shù)： 23/43頁(yè)
文件大?。?/td> 186K
代理商： 5962R9858301VXA
23
2.0 RADIATION HARDNESS
The UT80CRH196KD incorporates special design and layout
features and is built on UTMC’s Commercial RadHard
TM
silicon. The Commercial RadHard
TM
silicon is fabricated using
a minimally invasive process module, developed by UTMC, that
enhances the total dose radiation hardness of the field and gate
oxides while maintaining current density and reliability. In
addition, for both greater transient radiation-hardness and latch-
up immunity, the UT80CRH196KD is built on epitaxial
substrate wafers.
RADIATION HARDNESS DESIGN SPECIFICATIONS
Total Dose
Notes:
1. Worst case temperature T
A
= 25
o
C for Single Event Upset and 100
o
C for Single Event Latchup.
2. Adams 90% worst case environment (geosynchronous).
WEIBULL AND DEVICE PARAMETERS FOR ERROR-RATE CALCULATION
3.0 ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. These ratings are provided as design guidelines. They are not guaranteed by test or characterization.
3. Test per MIL-STD-883, Method 1012.
1.0E5
rads(Si)
LET Threshold
25
MeV-cm
2
/mg
Neutron Fluence
1.0E14
n/cm
2
Saturated Cross-Section (1Kx8)
3.66E-7
cm
2
/bit
Single Event Upset
1
4.9E-4
errors/device day
2
Single Event Latchup
1
LET > 128
MeV-cm
2
/mg
SHAPE
PARAMETER
1
WIDTH
PARAMETER
14
STRUCTURAL
CROSS-SECTION
3.66E-7cm2/bit
ONSET
LET
DEPLETION
DEPTH
0.8
μ
m
FUNNEL
DEPTH
1.45
μ
m
14.4MeV-cm2/mg
PARAMETER
LIMITS
UNITS
V
DD
DC Supply Voltage
-0.3 to 6.0
V
V
I/O
2
Voltage on Any Pin
-0.3 to V
DD
+0.3V
V
T
STG
Storage Temperature
-65 to +150
°
C
T
J
Maximum Junction Temperature
175
°
C
Θ
JC
Thermal Resistance, Junction-to-Case
3
16
°
C/W
I
I
2
DC Input Current
±
10
mA
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