參數(shù)資料
型號: 5962R9687301VXC
元件分類: PROM
英文描述: 8K X 8 OTPROM, 35 ns, CDIP28
封裝: 0.600 X 1.400 INCH, 0.100 INCH PITCH, CERAMIC, DIP-28
文件頁數(shù): 5/10頁
文件大?。?/td> 105K
代理商: 5962R9687301VXC
5
RADIATION HARDNESS
The UT28F64 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
AVQV
t
AXQX
t
EHQZ
t
GHQZ
A(12:0)
CE
OE
DQ(7:0)
t
GLQX
t
ELQX
Total Dose
5.0E5
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2
/mg
Memory Cell LET Threshold
>128
MeV-cm
2
/mg
Transient Upset LET Threshold
54
MeV-cm
2
/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm
2
/mg
1E-6
cm
2
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