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參數(shù)資料
| 型號(hào)： | 5962G9689104VYX |
| 廠商： | Aeroflex Inc. |
| 英文描述： | Radiation-Hardened 32K x 8 PROM |
| 中文描述： | 輻射加固32K的× 8胎膜早破 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 69K |
| 代理商： | 5962G9689104VYX |
5
RADIATION HARDNESS
The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
AVQV
t
AXQX
t
EHQZ
t
GHQZ
A(14:0)
CE
OE
DQ(7:0)
t
GLQX
t
ELQX
Total Dose
1E6
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2
/mg
Memory Cell LET Threshold
>128
MeV-cm
2
/mg
Transient Upset LET Threshold
54
MeV-cm
2
/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm
2
/mg
1E-6
cm
2
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