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參數(shù)資料
| 型號： | 5962F9689104QXX |
| 廠商： | Aeroflex Inc. |
| 英文描述： | Radiation-Hardened 32K x 8 PROM |
| 中文描述： | 輻射加固32K的× 8胎膜早破 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 5962F9689104QXX |
5
RADIATION HARDNESS
The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
AVQV
t
AXQX
t
EHQZ
t
GHQZ
A(14:0)
CE
OE
DQ(7:0)
t
GLQX
t
ELQX
Total Dose
1E6
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2
/mg
Memory Cell LET Threshold
>128
MeV-cm
2
/mg
Transient Upset LET Threshold
54
MeV-cm
2
/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm
2
/mg
1E-6
cm
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5962G9689104QXX | Radiation-Hardened 32K x 8 PROM |
| 5962H9689104QXX | Radiation-Hardened 32K x 8 PROM |
| 5962R9689104QXX | Radiation-Hardened 32K x 8 PROM |
| 5962F9689104QYA | Radiation-Hardened 32K x 8 PROM |
| 5962G9689104QYA | Radiation-Hardened 32K x 8 PROM |
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| 5962F9861301VXC | 制造商:Intersil Corporation 功能描述: |
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| 5962F9865102QYC | 制造商:STMicroelectronics 功能描述:EIA-644LINE DRIVERQUADFLAT16, GOLD - Bulk |
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