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參數(shù)資料
| 型號： | 5962F9584501QZC |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁數(shù)： | 4/41頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 5962F9584501QZC |
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SIZE
A
5962-94663
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
4
DSCC FORM 2234
APR 97
1.4 Recommended operating conditions.
Transceiver supply voltage range (V
CC
):
Device types 01, 03, 04, 06, 07, 09, 10 ......................................................... +4.75 V dc to +5.5 V dc
Device type 02.............................................................................................. +4.75 V dc to +5.25 V dc
Device types 05, 08, 11 ................................................................................ +4.5 V dc to +5.5 V dc
Logic supply voltage range (V
DD
) ...................................................................... +4.5 V dc to +5.5 V dc
Transceiver supply voltage range (V
EE
):
Device types 01, 04, 07, 10 .......................................................................... -15 V dc
Device types 03, 06, 09 ................................................................................ -12 V dc
Receiver differential voltage (V
DR
):
Device types 01, 03, 04, 06, 07, 09, 10 ......................................................... 40 V
P-P
Device types 02, 05, 08, 11 .......................................................................... 8.0 V
P-P
Logic dc input voltage range (V
IN
)...................................................................... 0 V dc to V
DD
Receiver common mode input voltage (V
IC
):
Device types 01, 03, 04, 06, 07, 09, 10 .........................................................
±
10 V dc
Device types 02, 05, 08, 11 ..........................................................................
±
5.0 V dc
Driver peak output current (I
O
):
Device types 01, 03, 04, 06, 07, 09, 10 ......................................................... 180 mA
Device types 02, 05, 08, 11 .......................................................................... 700 mA
Serial data rate range (S
D
) ............................................................................... 0 to 1 MHz
Clock duty cycle (D
C
) ....................................................................................... 50
±
5%
Case operating temperature range (T
C
) ............................................................ -55
°
C to +125
°
C
Operating frequency (F
IN
) ................................................................................. 24 MHz
±
0.01%
Radiation features:
Total dose
Device type 04, 10 ..................................................................................
≤
100k Rads (Si)
Device type 05 ........................................................................................
≤
1M Rads (Si)
Device type 11 ........................................................................................
≤
300k Rads (Si)
Single event phenomenon (SEP) effective
linear energy threshold, no upsets............................................................ 1/
Neutron fluence (TM 1017) ........................................................................... 1/
1.5 Digital logic testing for device classes Q and V.
Fault coverage measurement of manufacturing
logic tests (MIL-STD-883, test method 5012)................................................ 95.12 percent
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed
in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in
the solicitation.
1/
Values will be added when they become available. Rad hard devices have not yet been tested for neutron or SEP.
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