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參數(shù)資料
| 型號： | 5962F9565402VCC |
| 英文描述： | Dual, 10-Bit, 40MHz, Current/Voltage Simultaneous-Output DACs |
| 中文描述： | 四2輸入異或（XOR）門 |
| 文件頁數(shù)： | 33/41頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 5962F9565402VCC |
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SIZE
A
5962-94663
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
B
SHEET
33
DSCC FORM 2234
APR 97
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the
pre-irradiation end-point electrical parameter limit at 25
°
C
±
5
°
C. Testing shall be performed at initial qualification and after
any design or process changes which may affect the RHA response of the device.
4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and
herein (see 1.4). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table IA,
for the subgroups specified in table IIA herein at T
A
= +25
°
C
±
5
°
C after an exposure of 2 x 10
12
neutron/cm
2
(minimum).
4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (see 1.4). Tests shall be performed on devices, SEC, or approved test
structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
4.4.4.4 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of
MIL-STD-883 and herein (see 1.4).
a.
Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may effect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.
Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved
radiation hardness assurance plan and MIL-PRF-38535.
4.4.4.5 Single event phenomena (SEP). SEP testing shall be required on class V devices (see 1.4). SEP testing shall be
performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at
initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The
recommended test conditions for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60
°
to the normal, inclusive (i.e. 0
°
≤
angle
≤
60
°
). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b. The fluence shall be
≥
100 errors or
≥
10
6
ions/cm
2
.
c.
The flux shall be between 10
2
and 10
5
ions/cm
2
/s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d. The particle range shall be
≥
20 microns in silicon.
e. The test temperature shall be +25
°
C and the maximum rated operating temperature
±
10
°
C.
f.
Bias conditions shall be defined by the manufacturer for latchup measurements.
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