參數(shù)資料
型號: 5962-9751801MPA
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 運算放大器
英文描述: OP-AMP, CDIP8
封裝: DIP-8
文件頁數(shù): 6/8頁
文件大?。?/td> 316K
代理商: 5962-9751801MPA
The capacitances are defined as:
Cin = Internal Input Capacitance of the CLC440
(typ 1.2pF)
Cd = Equivalent Diode Capacitance
Cf = Feedback Capacitance
The transimpedance plot in the typical performance
section provides the recommended Cf and expected
bandwidth for different gains and diode capacitances.
The feedback capacitances indicated on the plot
give optimum gain flatness and stability.
If a smaller
capacitance is used, then peaking will occur.
The
frequency response shown in Figure 4 illustrates the
influence of the feedback capacitance on gain flatness.
Figure 4
The total input current noise density (ini) for the basic
transimpedance configuration is shown in Equation 3.
The plot of current noise density versus feedback
resistance is shown in Figure 5.
Figure 5
Equation 3: Total Equivalent Input Referred Current
Noise Density
Rectifier
The large bandwidth of the CLC440 allows for high speed
rectification. A common rectifier topology is shown in
Figure 6. R1 and R2 set the gain of the rectifier. Vout for
a 5MHz, 2Vpp sinusoidal input is shown in Figure 7.
Figure 6: Rectifier Topology
Figure 7: Rectifier Output
Tunable Low Pass Filter
The center frequency of the low pass filter (LPF) can be
adjusted by varying the CLC522 gain control voltage, Vg.
Figure 8: Tunable Low Pass Filter
Transimpedance Amplifier
Frequency Response
Gain
(dB)
Frequency (Hz)
10k
1M
40
60
100k
30
20
50
70
80
10M
100M
1G
Iin
-
+
CLC440
5pF
1k
Cf
100
Cf = 0
Cf = 1pF
Cf = 2pF
Cf = 5pF
Cf = 2.5pF
Current Noise Density vs.
Feedback Resistance
Current
Noise
Density
(pA/
√Hz)
Feedback Resistance (k
)
0.1
10
ini
10
15
20
25
1.0
5
0
30
35
40
if
in
en
Rf
(Total)
Vin
-
+
CLC440
R2
R1
D2
D1
Vout
Rectifier Output
V
out
(V)
Time (ns)
0
200
-1.2
-0.8
-0.4
0.4
100
-1.6
-2.0
0
0.8
1.2
2.0
300
400
500
1.6
Qk
RC
RR C C
2
12 1 2
=
Vin
-
+
CLC440
R
R2
RT
Vout
C2
-
+
CLC440
-
+
CLC522
R1
C1
Rin
Rg
Ra
Rf
20
Vg
ω
o
12 1 2
k
RR C C
=
R
V
1.8mA
g
in (max)
=
A
k
1.85
R
v (max)
f
g
==
ii
e
R
4kT
R
ni
n
n2
f
2
f
=+
+
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