參數(shù)資料
型號(hào): 5962-9053801VPA
廠商: TEXAS INSTRUMENTS INC
元件分類: 整流器
英文描述: SILICON, RECTIFIER DIODE
封裝: CERAMIC, DIP-8
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 168K
代理商: 5962-9053801VPA
UC1611
UC3611
SLUS338A – JUNE 1993 – REVISED MAY 2001
2
www.ti.com
J OR N PACKAGE
(TOP VIEW)
DW PACKAGE
(TOP VIEW)
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode)
50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode-to-diode voltage
80 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak forward current
UC1611
1 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UC3611
3 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation at TA = 70°C
1 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (soldering, 10 seconds)
300
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ,
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
For ard oltage drop
IF = 100 mA
0.3
0.4
0.7
V
Forward voltage drop
IF = 1 A
0.9
1.2
V
Leakage current
VR = 40 V
0.01
0.1
mA
Leakage current
VR = 40 V,
TJ = 100°C
0.1
1.0
mA
Reverse recovery
0.5 A forward to 0.5 A reverse
20
ns
Forward recovery
1 A forward to 1.1 V recovery
40
ns
Junction capacitance
VR = 5V
100
pF
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
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