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參數(shù)資料
| 型號： | 5962-9053801PA |
| 元件分類： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 封裝： | CERAMIC, DIP-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 5962-9053801PA |
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Diode-to-Diode Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Peak Forward Current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation at TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Lead Temperature (Soldering, 10 Seconds). . . . . . . . . . . . . . . . . . . . . . . +300°C
Note: Please consult Packaging Section of Databook for thermal limitations and
considerations of package.
ELECTRICAL CHARACTERISTICS:
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Forward Voltage Drop
IF = 100mA
0.3
0.4
0.7
V
IF = 1A
0.9
1.2
V
Leakage Current
VR = 40V
0.01
0.1
mA
VR = 40V, TJ = +100°C
0.1
1.0
mA
Reverse Recovery
0.5A Forward to 0.5A Reverse
20
ns
Forward Recovery
1A Forward to 1.1V Recovery
40
ns
Junction Capacitance
VR = 5V
100
pF
Note: At Forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes.
All specifications apply to each individual diode. TJ = +25°C except as noted.
TA = TJ.
UC1611
UC3611
Reverse Current vs Voltage
Forward Current vs Voltage
2
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