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參數(shù)資料
| 型號： | 5962-8950305GA |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 模擬波形發(fā)生器 |
| 英文描述： | PULSE, TIMER, MBCY8 |
| 封裝： | METAL CAN, TO-99, 8 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 103K |
| 代理商： | 5962-8950305GA |
MNLMC555-X REV 1AL
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
SYMBOL
PARAMETER
CONDITIONS
NOTES
PIN-
NAME
MIN
MAX
UNIT
SUB-
GROUPS
Vol
Low
Level Output
Voltage
Vdd = 1.5V, Iol = 1.0mA
0.40
V
1, 2,
3
Vdd = 5.0V, Iol = 8.0mA
0.60
V
1, 2,
3
Vdd = 5.0V, Iol = 5.0mA
0.45
V
1, 2,
3
Vdd = 5.0V, Iol = 3.2mA
0.40
V
1, 2,
3
Vdd = 12.0V, Iol = 75mA
3.50
V
1, 2,
3
Vdd = 12.0V, Iol = 50mA
2.00
V
1, 2,
3
Vdd = 12.0V, Iol = 10mA
1.00
V
1, 2,
3
Icex
Discharge
Transistor
Leakage Current
Vdd = 1.5V
100
nA
1
1000
nA
2
Vdd = 5.0V
100
nA
1
1000
nA
2
Vdd = 12.0V
100
nA
1
1000
nA
2
Ir
Reset Current
Vdd = 1.5V
+50
nA
1, 2
Vdd = 5.0V
+50
nA
1, 2
Vdd = 12.0V
+50
nA
1, 2
Vsat
Discharge
Transistor
Saturation
Voltage
Vdd = 1.5V, Iol = 1.0mA
0.15
V
1, 2,
3
Vdd = 5.0V, Iol = 10mA
0.30
V
1, 2,
3
Vdd = 12.0V, Iol = 25mA
2.00
V
1, 2,
3
AC PARAMETERS
tMON
Monostable Timing
Accuracy
1.5V < Vdd < 12.0V, Rt = 10K Ohm,
Ct = 0.1uF
900
1250
uS
9, 10,
11
tAST
Astable Timing
Accuracy
Vdd = 12.0V, Ct = 0.1uF, Rta = 1k Ohm,
Rtb = 1k Ohm
178
250
uS
9, 10,
11
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
See attached graphics following this page.
3
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