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參數(shù)資料
| 型號： | 5962-0420401HYC |
| 英文描述： | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 2.0安培輸出電流IGBT柵極驅(qū)動光電耦合器 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 194K |
| 代理商： | 5962-0420401HYC |
14
CMR with the LED On (CMR
H
).
A high CMR LED drive circuit
must keep the LED on during
common mode transients. This
is achieved by overdriving the
LED current beyond the input
threshold so that it is not
pulled below the threshold
during a transient. A minimum
LED current of 10 mA provides
adequate margin over the
maximum I
FLH
of 7 mA to
achieve 10 kV/
μ
s CMR.
CMR with the LED Off (CMR
L
).
A high CMR LED drive circuit
must keep the LED off (V
F
≤
V
F(OFF)
) during common mode
transients. For example, during
a -dV
cm
/dt transient in Figure
30, the current flowing through
C
LEDP
also flows through the
R
SAT
and V
SAT
of the logic gate.
As long as the low state voltage
developed across the logic gate
is less than V
F(OFF)
, the LED
will remain off and no common
mode failure will occur.
Figure 30. Equivalent Circuit for Figure 25 During Common Mode Transient.
Rg
1
3
V
SAT
_
2
4
8
6
7
5
+
VCM
I
LEDP
C
LEDP
C
LEDN
SHIELD
*THE ARROWS INDICATE THE DIRECTION
OF CURRENT FLOW DURING
dVCM/dt
+5 V
+
_
VCC = 18 V
***
0.1
μF
+
_
***
The open collector drive circuit,
shown in Figure 31, cannot keep
the LED off during a +dV
cm
/dt
transient, since all the current
flowing through C
LEDN
must be
supplied by the LED, and it is
not recommended for
applications requiring ultra high
CMR
L
performance. Figure 32 is
an alternative drive circuit
which, like the recommended
application circuit (Figure 25),
does achieve ultra high CMR
performance by shunting the
LED in the off state.
Figure 31. Not Recommended Open Collector
Drive Circuit
Figure 32. Recommended LED Drive Circuit for
Ultra-High CMR
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
SHIELD
+5 V
Q1
I
LEDN
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
SHIELD
+5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5962-0420501HPA | 功能描述:邏輯輸出光電耦合器 0.5A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420501HPC | 功能描述:邏輯輸出光電耦合器 0.5A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420501HPX | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| 5962-0420501HXA | 功能描述:邏輯輸出光電耦合器 0.5A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420501HYA | 功能描述:邏輯輸出光電耦合器 0.5A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
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