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參數(shù)資料
| 型號： | 5962-0420401HPA |
| 英文描述： | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 2.0安培輸出電流IGBT柵極驅(qū)動光電耦合器 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 194K |
| 代理商： | 5962-0420401HPA |
13
Figure 27. Energy Dissipated in the HCPL-5120
for Each IGBT Switching Cycle
LED Drive Circuit Considerations for
Ultra High CMR Performance.
Without a detector shield, the
dominant cause of optocoupler
CMR failure is capacitive
coupling from the input side of
the optocoupler, through the
package, to the detector IC as
shown in Figure 28. The HCPL-
5120 improves CMR
performance by using a detector
IC with an optically transparent
Faraday shield, which diverts
the capacitively coupled current
away from the sensitive IC
circuitry. However, this shield
does not eliminate the
capacitive coupling between the
LED and optocoupler pins 5-8
as shown in Figure 29. This
capacitive coupling causes
perturbations in the LED
current during common mode
transients and becomes the
major source of CMR failures
for a shielded optocoupler. The
main design objective of a high
CMR LED drive circuit becomes
keeping the LED in the proper
state (on or off) during common
mode transients. For example,
the recommended application
circuit (Figure 25), can achieve
10 kV/
μ
s CMR while minimizing
component complexity.
Techniques to keep the LED in
the proper state are discussed
in the next two sections.
Figure 28. Optocoupler Input to Output Capaci-
tance Model for Unshielded Optocouplers.
Figure 29. Optocoupler Input to Output Capaci-
tance Model for Shielded Optocouplers.
Figure 26. Typical Application Circuit with Negative IGBT Gate Drive
+ HVDC
3-PHASE
AC
- HVDC
0.1 μF
V
CC
= 15 V
1
3
+
_
2
4
8
6
7
5
Rg
Q1
Q2
V
EE
= -5 V
+
270
+5 V
CONTROL
INPUT
74XXX
OPEN
COLLECTOR
_
P
E
Parameter Description
I
F
LED Current
V
F
LED On Voltage
Duty Cycle
Maximum LED
Duty Cycle
P
O
Parameter Description
I
CC
Supply Current
V
CC
Positive Supply
Voltage
V
EE
Negative Supply
Voltage
E
SW
(Rg, Qg)
Energy Dissipation in
the HCPL-5120 for
each IGBT Switching
Cycle (See Figure 27)
f
Switching Frequency
E
0
0
Rg - GATE RESISTANCE -
100
3
20
7
40
2
60
80
6
Qg = 100 nC
Qg = 250 nC
Qg = 500 nC
5
4
1
V
CC
= 19 V
V
EE
= -9 V
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
SHIELD
C
LEDO1
C
LEDO2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5962-0420401HPC | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 5962-0420401HXA | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 5962-0420401HYA | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 5962-0420401HYC | 2.0 Amp Output Current IGBT Gate Drive Optocoupler |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5962-0420401HPC | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420401HPX | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2.0 Amp Output Current IGBT Gate Drive Optocoupler |
| 5962-0420401HXA | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420401HYA | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
| 5962-0420401HYC | 功能描述:邏輯輸出光電耦合器 2.0A IGBT Gate Drive Hermetically sealed RoHS:否 制造商:Fairchild Semiconductor 絕緣電壓:4243 Vrms 輸出類型:Push-Pull 最大傳播延遲時間:500 ns 最大正向二極管電壓: 最大反向二極管電壓: 最大正向二極管電流: 最大連續(xù)輸出電流:2.5 A 最大功率耗散:100 mW 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:SO-16 封裝:Tube |
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