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參數(shù)資料
| 型號： | 52PF120PBF |
| 元件分類： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封裝： | PLASTIC, DO-5, 1 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 619K |
| 代理商： | 52PF120PBF |
50PF (R)...(W) Series
2
Bulletin I20105 rev. D 01/05
www.irf.com
Voltage
V
RRM, maximum
V
RSM, maximum non-
I
RRM max.
Type number
Code
repetitive peak
@ T
J = 150°C
reverse voltage
VV
mA
40
400
500
50PF (R)...(W)
80
800
960
9
120
1200
1440
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
50
A
180° conduction, half sine wave
@ Case temperature
140
°C
IF(RMS) Max. RMS forward current
78
A
I
FSM
Max. peak, one-cycle forward,
800
t = 10ms
No voltage
non-repetitive surge current
830
t = 8.3 ms
reapplied
670
t = 10ms
100% V
RRM
700
t = 8.3 ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
3200
t = 10ms
No voltage
Initial T
J = 150°C
2900
t = 8.3ms
reapplied
2260
t = 10ms
100% V
RRM
2050
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
32000
A2√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)
Low level value of threshold
voltage
r
f
Low level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.40
V
Ipk= 125A, TJ = 25°C, tp = 400s rectangular wave
Parameter
Units Conditions
4.30
m
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
0.77
V
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
A2s
A
Forward Conduction
50PF(R)...(W)
40 to 120
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 52PF120W | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
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| 52PF40W | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
| 52PF80 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:STANDARD RECOVERY DIODES GEN II DO5 |
| 52PF80W | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A |
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