參數(shù)資料
型號(hào): 514H4
英文描述: Infrared Emitting Diodes (IRED)
中文描述: 紅外發(fā)光二極管(登記合格決定)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 32K
代理商: 514H4
GaAlAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-514H4 is a GaAlAs infrared LED having
a peak wavelength at 850 nm . It feature ultra-high
power, high response speed and molded in water
clear plastic package, the MIE-514H4
have greatly
improved long-distance characteristics as well as
as significantly increased its range of applicability.
Features
l
Ultra-High radiant incidence
l
High response speed
l
High modulation bandwidth
l
Standard T-1 3/4 (
φ
5mm ) package
l
Radiation angle : 15°
l
Peak wavelength
λ
p
= 850 nm
Applications
l
Free air transmission systems with high -speed
response
l
SIR
Absolute Maximum Ratings
@ T
A
=25
o
C
Unit
Parameter
Maximum Rating
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
120
mW
1
A
Continuos Forward Current
100
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
11/17/2000
Unity Opto Technology Co., Ltd.
C
φ
5.05
(.200)
2.54NOM.
(.100)
SEE NOTE 2
7.62
(.300)
1.00
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
1.00MIN.
(.040)
A
FLAT DENOTES CATHODE
5.90
(.230)
5.47
(.215)
SEE NOTE 3
Unit: mm (inches)
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
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