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參數(shù)資料
| 型號(hào)： | 50MT060ULSTAPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 單結(jié)晶體管 |
| 英文描述： | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 10 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 100 Amp Low Side Chopper |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 226K |
| 代理商： | 50MT060ULSTAPBF |
50MT060ULSTAPbF
Vishay Semiconductors
www.vishay.com
Revision: 17-Jun-11
1
Document Number: 94540
For technical questions, contact:
indmodules@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A
FEATURES
Generation 4 ultrafast speed IGBT technology
HEXFRED
diode with ultrasoft reverse
recovery
Very low conduction and switching losses
Optional SMD thermistor (NTC)
Al
2
O
3
DBC
Very low stray inductance design for high speed operation
UL approved file E78996
Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
Compliant to RoHS Directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Optimized for welding, UPS and SMPS applications
Low EMI, requires less snubbing
Direct mounting to heatsink
PCB solderable terminals
Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
600 V
100 A
1.68 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
T
C
= 122 °C
100
A
50
Pulsed collector current
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
200
Peak switching current
200
Diode continuous forward current
T
C
= 100 °C
48
Peak diode forward current
200
Gate to emitter voltage
± 20
V
RMS isolation voltage
Any terminal to case, t = 1 minute
2500
Maximum power dissipation
IGBT
P
D
T
C
= 25 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
445
W
175
Diode
205
83
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 50MT060WH | 功能描述:IGBT WARP 600V 114A MTP RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| 50MT060WHA | 制造商:International Rectifier 功能描述: |
| 50MT060WHPBF | 制造商:International Rectifier 功能描述:IGBT MODULE MTP |
| 50MT060WHT | 制造商:Vishay Semiconductors 功能描述:IGBT MODULE MTP |
| 50MT060WHTA | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE IGBT MTP |
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