參數(shù)資料
型號: 50GD120DN2G
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 7/9頁
文件大?。?/td> 252K
代理商: 50GD120DN2G
7
Oct-20-1997
BSM 50 GD 120 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 22
0
20
40
60
80
A
120
I
C
1
10
2
10
3
10
ns
t
tdoff
tr
tf
tdon
Typ. switching time
t = f (R
G
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
I
C
= 50 A
0
20
40
60
80
120
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 22
0
20
40
60
80
A
120
I
C
0
5
10
15
mWs
25
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
T
j
= 125°C
par.:
V
CE
= 600V,
V
GE
= ± 15 V,
I
C
= 50 A
0
20
40
60
80
120
R
G
0
5
10
15
mWs
25
E
Eon
Eoff
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