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參數(shù)資料
| 型號： | 5082-2900 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 5082-2900 |
5
Typical Parameters, continued
VF - FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
100
10
1.0
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50
°C
0
°C
+25
°C
+50
°C
+100
°C
+150
°C
VR - REVERSE VOLTAGE (V)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
100,000
10,000
1000
100
10
1
I R
-
REVERSE
CURRENT
(nA)
0
5
10
15
20
25
30
150
100
50
25
TA = °C
VF - FORWARD VOLTAGE (V)
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
100
10
1.0
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
+150
°C
+100
°C
+50
°C
+25
°C
0
°C
–50
°C
VR - REVERSE VOLTAGE (V)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
100,000
10,000
1000
100
10
1
I R
-
REVERSE
CURRENT
(nA)
01
2
3
4
5
6
+150
°C
+125
°C
+100
°C
+75
°C
+50
°C
+25
°C
VR - REVERSE VOLTAGE (V)
Figure 14. Typical Capacitance (CT) vs.
Reverse Voltage (VR).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C
T
-
CAPACITANCE
(pF)
0
2468
10
5082-2810/2811
IN5712
5082-2835
IF - FORWARD CURRENT (mA)
Figure 15. Typical Dynamic Resistance
(RD) vs. Forward Current (IF).
1000
100
10
1
R
D
-
DYNAMIC
RESISTANCE
(
)
0
2468
10
5082-2800, 1N5711
5082-2811
1N5712
5082-2835
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|---|---|
| 5082-2900 | SILICON, MIXER DIODE |
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| 5082-2811 | SILICON, MIXER DIODE |
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