參數(shù)資料
型號(hào)： 5082-2830
英文描述： Schottky Barrier Diode Quads for Double Balanced Mixers(應(yīng)用于雙路平衡混頻器的肖特基二極管)
中文描述： 肖特基二極管圣城的雙平衡混頻器（應(yīng)用于雙路平衡混頻器的肖特基二極管）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 32K
代理商： 5082-2830
Electrical Specifications at T
A
= 25
°
C
Maximum
Measured
Capacitance
Difference
C
M
(pF)
0.20
Maximum
V
Difference
V
F
( mV)
20
Maximum
Dynamic
Resistance
R
D
(
)
12
Part
Number
5082-
2830
Maximum
Capacitance
C
M
(pF)
0.5 Typ.
Forward
Voltage
V
F
( V)
0.40
Package
E4
Barrier
Medium
Test
V
= 0
f = 1 MHz
I
= 5 mA
I
= 1 mA
Measured
between
Adjacent Leads
Conditions
between Adjacent Leads
Typical
Parameters
where I
B
is the bias current in
milliamperes. The series
resistance is independent of
current.
The dynamic resistance is more
easily measured. If series
resistance is specified, it is usually
obtained by subtracting the
calculated junction resistance
from the measured dynamic
resistance.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
Package Characteristics
The Agilent outline E4 package is
designed for MIC, Microstrip, and
Stripline use from dc through
C-Band. The leads provide a good
continuity of transmission line
impedance to the monolithic
diode array. The leads are tin
plated copper.
Dynamic and Series
Resistance
Schottky diode resistance may be
expressed as series resistance, R
S
,
or as dynamic ressitance, R
D
.
These two terms are related by
the equation
R
D
= R
S
= R
j
where R
j
is the resistance of the
junction. Junction resistance of a
diode with DC bias is quite
accurately calculated by
R
j
= 26/I
B
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in figure
below. The diagonal capacitance
is calculated using the following
formula
C
x C
C
DIAGONAL
= _______ + ______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in figure
below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
–– + 1
C
2
C
3
1
C
4
SPICE Parameters
Parameter
Units
5082-2830
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
10
4
0.69
10E -5
2 x 10E -10
1.08
6
0.65
2
0.5
pF
eV
A
A
V
www.semiconductor.agilent.com
Data subject to change.
Copyright 1999 Agilent Technologies
5965-8848E (11/99)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
5082-2835 功能描述:肖特基二極管與整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
5082-2835#T25 功能描述:肖特基二極管與整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
5082-2835#T50 功能描述:肖特基二極管與整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
5082-2835 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY
5082-2835_1008 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SCHOTTKY BARRIER DIODE
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