參數(shù)資料
型號: 5082-2711
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 射頻混頻器
英文描述: SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
文件頁數(shù): 1/1頁
文件大?。?/td> 28K
代理商: 5082-2711
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
VBR
IR = 10 A
4.0
V
LO
LO = 1.0 mW
IF = 30 MHz, 1.5 dB NF
9.375
GHz
NF
LO = 1.0 mW
IF = 30 MHz, 1.5 dB NF
6.5
dB
ZIF
LO = 1.0 mW
IF = 10 KHz, 1.5 dB NF
200
400
CJO
VR = 0 V
f = 1.0 MHz
0.10
pF
SWR
LO = 1.0 mW
IF = 10 KHz, 1.5 dB NF
2.0:1
---
MEDIUM BARRIER SCHOTTKY DIODE
5082-2711
DESCRIPTION:
The
ASI 5082-2711 is a Silicon Small
Signal Schottky Diode for use in broad
band and narow band microstrip, coaxial,
or wavegide mixer assemblies operating
up to 18 GHz. Color Dot indicates
Cathode.
MAXIMUM RATINGS
VR
4.0 V
PDISS
200 mW @ TA = 25 °C
TJ
-60 °C to +150 °C
TSTG
-60 °C to +150 °C
PACKAGE STYLE 19
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