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參數(shù)資料
| 型號： | 5082-2207 |
| 英文描述： | Stripline, Microstrip Mixers and Detectors(帶狀線，微波傳送帶的混頻器和檢測器) |
| 中文描述： | 帶狀線，微帶混頻器和檢測器（帶狀線，微波傳送帶的混頻器和檢測器） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 62K |
| 代理商： | 5082-2207 |
2
Maximum Ratings
Operating and Storage Temperature Range
C2 Packaged Diodes........................................................-65
°
C to +150
°
C
Pulse Power Incident at T
CASE
= 25
°
C .....................................................1 W
(1
μ
s pulse, Du = 0.001)
CW Power Dissipation at T
CASE
= 25
°
C
(Measured in an infinite heat sink) ...............................................125 mW
Derate linearly to zero at maximum operating temperature.
Diode Mounting Temperature in Packages
C2 ............................................................................. 235
°
C for 10 sec max.
Peak Inverse Voltage ..................................................................................4 V
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
RF Electrical Specifications at T
A
= 25
°
C
Maximum
Noise
Figure
NF (dB)
6.0
6.5
6.5
IF
Typical
J unction
Capacitance
C
j
(pF)
0.18
Part
Number
5082-
2207
2209
2794
Test
Conditions
Test
Freq.
(GHz)
9.375
Impedance
Z
(
)
Min. Max.
200
Maximum
SWR
1.5:1
2.0:1
2.0:1
Barrier
Medium
Medium
Low
Package
Broadband C2
400
150
350
DC Load Resistance = 0
L.O. Power = 1 mW
IF = 30 MHz, 1.5 dB NF
V = 0
*Minimum batch size 20 units.
Low Barrier (Zero Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-44
dBm
Zero Bias, R
L
= 10 M
P
in
= - 30 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
Voltage Sensitivity
γ
10
mV/
μ
W
Video Resistance
R
V
1.8
Μ
Typical Detector Characteristics at T
A
= 25
°
C
Medium Barrier and Low Barrier (DC Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
T
SS
-54
dBm
20
μ
A Bias, R
L
= 100 K
P
in
= - 40 dBm
Video Bandwidth = 2 MHz
f = 10 GHz
Voltage Sensitivity
γ
6.6
mV/
μ
W
Video Resistance
R
V
1400
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5082-2209 | 制造商:Agilent Technologies 功能描述:SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE 制造商:Hewlett Packard Co 功能描述:SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 5082-2240-00 | 功能描述:射頻適配器 - 系列之間 ADPTR-SMC PLG/SMA JK RoHS:否 制造商:Amphenol Connex 側(cè)1射頻系列:SMA 側(cè)1性別:Jack (Female) 側(cè)1極性:Normal 側(cè)1體類型:Bulkhead 側(cè)2射頻系列:TNC 側(cè)2性別:Jack (Female) 側(cè)2極性:Normal 側(cè)2體類型:Bulkhead 阻抗:50 Ohms 適配器類型:Straight 頻率范圍:DC to 11 GHz 觸點電鍍:Gold 外殼電鍍:Gold 主體材料:Brass |
| 5082-2241-00 | 功能描述:射頻適配器 - 系列之間 SMA Plug to SMC Jack RoHS:否 制造商:Amphenol Connex 側(cè)1射頻系列:SMA 側(cè)1性別:Jack (Female) 側(cè)1極性:Normal 側(cè)1體類型:Bulkhead 側(cè)2射頻系列:TNC 側(cè)2性別:Jack (Female) 側(cè)2極性:Normal 側(cè)2體類型:Bulkhead 阻抗:50 Ohms 適配器類型:Straight 頻率范圍:DC to 11 GHz 觸點電鍍:Gold 外殼電鍍:Gold 主體材料:Brass |
| 5082-2271 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
| 5082-2277 | 制造商:ASI 制造商全稱:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
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