
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
725 E.Walnut Str., Garland, TX 75040
(972)272-3571
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
4N47U
4N48U
JAN, JANTX, JANTXV,
OPTOCOUPLERS
4N49U
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
High reliability
Base lead provided for conventional transistor
biasing
Very high gain, high voltage transistor
Hermetically sealed for reliability and stability
Stability over wide temperature range
High voltage electrical isolation
Applications:
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
DESCRIPTION
Very high gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor packaged in a
hermetically sealed 6-pin leadless chip carrier. The
4N47U
,
4N48U
and
4N49U
optocouplers can be supplied to customer
specifications as well as JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................
±
1kV
Collector-Base Voltage ...........................................................................................................................................................45V
Collector-Emitter Voltage (See Note 1) ..................................................................................................................................40V
Emitter-Base Voltage................................................................................................................................................................7V
Input Diode Reverse Voltage....................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2).....................................40mA
Continuous Collector Current...............................................................................................................................................50mA
Peak Diode Current (See Note 3).............................................................................................................................................1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4)................................300mW
Operating Free-Air Temperature Range............................................................................................................-55°C to +125°C
Storage Temperature.........................................................................................................................................-65°C to +125°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds)..........................................................................................240°C
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for t
w
≤
1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
* JEDEC registered data
Package Dimensions Schematic Diagram
.240 (6.10)
.250 (6.35)
.165 (4.19)
.175 (4.44)
PIN 1
IDENTIFIER
2
1
6
5
4
3
.045 (1.14)
.055 (1.39)
.095 (2.41)
.105 (2.67)
.082 (2.08)
.098 (2.49)
3
E
B
K
6
4
5
C
A
1
.066 (1.68)
.080 (2.03)
.028 (0.71)
.022 (0.56)
.060 (1.52)
.070 (1.78)
5 PL