參數(shù)資料
型號(hào): 4N32-X001
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP
中文描述: Transistor Output Optocouplers Phototransistor Out Single CTR>500%
文件頁數(shù): 3/6頁
文件大?。?/td> 131K
代理商: 4N32-X001
Document Number: 81865
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.2, 15-Feb-11
3
4N32, 4N33
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
Vishay Semiconductors
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Fig. 2 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
VCE = 10 V, IF = 10 mA
CTR
500
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Turn-on time
VCC = 10 V, IC = 50 mA
ton
5μs
Turn-off time
IF = 200 mA, RL = 180
toff
100
μs
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Climatic classification
(according to IEC 68 part 1)
55/100/21
Comparative tracking index
CTI
175
399
VIOTM
8000
V
VIORM
890
V
PSO
700
mW
ISI
400
mA
TSI
175
°C
Creepage distance
Standard DIP-6
7
mm
Clearance distance
Standard DIP-6
7
mm
Creepage distance
400 mil DIP-6
8
mm
Clearance distance
400 mil DIP-6
8
mm
Insulation thickness,
reinforced rated
per IEC 60950 2.10.5.1
0.4
mm
i4n32-33_02
0.1
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE = 5 V
I
F - LED Current (mA)
NCTR
CE
-
Normalized
CTR
CE
V
CE = 5 V
I
F = 10 mA
T
A = 25 °C
Normalized to:
V
CE = 1 V
i4n32-33_03
100
1
0.1
0.001
0.01
0.1
1
10
I
F - LED Current (mA)
NI
CE
-
Normalized
I
CE
10
V
CE = 5 V
I
F = 10 mA
T
A = 25 °C
Normalized to:
V
CE = 5 V
V
CE = 1 V
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4N32-X006 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N32-X007 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N32-X007T 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N32-X009 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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