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參數(shù)資料
| 型號： | 4N27 |
| 廠商： | QUALITY TECHNOLOGIES CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | GAAS INFRARED EMITTING DIODE |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | PLASTIC, DIP-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 246K |
| 代理商： | 4N27 |
4N25 4N25A 4N26 4N27 4N28
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ(1)
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
—
1.15
1.3
1.05
1.5
—
Volts
Reverse Leakage Current (VR = 3 V)
IR
—
100
A
Capacitance (V = 0 V, f = 1 MHz)
CJ
—
18
—
pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
4N25,25A,26,27
(VCE = 10 V, TA = 25°C
4N28
ICEO
—
1
50
100
nA
(VCE = 10 V, TA = 100°C)
All Devices
ICEO
—
1
—
A
Collector–Base Dark Current (VCB = 10 V)
ICBO
0.2
—
nA
Collector–Emitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
45
—
Volts
Collector–Base Breakdown Voltage (IC = 100 A)
V(BR)CBO
70
100
—
Volts
Emitter–Collector Breakdown Voltage (IE = 100 A)
V(BR)ECO
7
7.8
—
Volts
DC Current Gain (IC = 2 mA, VCE = 5 V)
hFE
—
500
—
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
—
7
—
pF
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
CCB
—
19
—
pF
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CEB
—
9
—
pF
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
4N25,25A,26
4N27,28
IC (CTR)(2)
2 (20)
1 (10)
7 (70)
5 (50)
—
mA (%)
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)
VCE(sat)
—
0.15
0.5
Volts
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
ton
—
2.8
—
s
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
toff
—
4.5
—
s
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
tr
—
1.2
—
s
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
tf
—
1.3
—
s
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
VISO
7500
—
Vac(pk)
Isolation Resistance (V = 500 V)(4)
RISO
1011
—
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
CISO
—
0.2
—
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
QT Optoelectronics Device Data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N26 | GAAS INFRARED EMITTING DIODE |
| 4N25 | GAAS INFRARED EMITTING DIODE |
| 4N27V | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N26V | TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N28V | TRANSISTOR OUTPUT OPTOCOUPLER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N27(SHORT) | 制造商:Toshiba America Electronic Components 功能描述:Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP |
| 4N27 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| 4N27.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N27.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N27.300W | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
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