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參數(shù)資料
| 型號： | 4N27-X007 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | OPTOCOUPL DC-IN 1CH TRANS W/BASE DC-OUT 6PDIP SMD - Bulk |
| 中文描述： | Transistor Output Optocouplers Phototransistor Out Single CTR>10% |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 145K |
| 代理商： | 4N27-X007 |
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 16-Jan-12
2
Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
t
≤ 10 μs
IFSM
2.5
A
Power dissipation
Pdiss
70
mW
OUTPUT
Collector emitter breakdown voltage
VCEO
70
V
Emitter base breakdown voltage
VEBO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Output power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
VISO
5000
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE0303, part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (1)
IF = 50 mA
VF
1.36
1.5
V
Reverse current (1)
VR = 3.0 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector base breakdown voltage (1)
IC = 100 μA
BVCBO
70
V
Collector emitter breakdown voltage(1)
IC = 1.0 mA
BVCEO
30
V
Emitter collector breakdown voltage (1)
IE = 100 μA
BVECO
7V
ICEO(dark) (1)
VCE = 10 V, (base open)
4N25
5
50
nA
4N26
5
50
nA
4N27
5
50
nA
4N28
10
100
nA
ICBO(dark) (1)
VCB = 10 V,
(emitter open)
2.0
20
nA
Collector emitter capacitance
VCE = 0
CCE
6.0
pF
COUPLER
Isolation test voltage (1)
Peak, 60 Hz
VIO
5000
V
Saturation voltage, collector emitter
ICE = 2.0 mA, IF = 50 mA
VCE(sat)
0.5
V
Resistance, input output (1)
VIO = 500 V
RIO
100
G
Ω
Capacitance, input output
f = 1 MHz
CIO
0.5
pF
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