參數(shù)資料
型號: 4GBU08
元件分類: 參考電壓二極管
英文描述: Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
中文描述: 800V的大橋在GBU包
文件頁數(shù): 2/5頁
文件大?。?/td> 98K
代理商: 4GBU08
4GBU Series
2
Bulletin I2717 rev. G 05/02
www.irf.com
I
O
Maximum DC output current
4
A
T
C
= 100°C, Resistive & nductive oad
T
C
= 100°C, Capacitive oad
t = 10ms
3.2
150
I
FSM
Maximum peak, one-cycle
non-repetitive surge current,
following any rated oad condition
and with rated V
RRM
reapplied
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse eakage
curren t per diode
Maximum repetitive peak
reverse voltage range
158
t = 8.3ms
T
J
= 150°C
I
2
t
113
104
A
2
s
t = 10ms
t = 8.3ms
V
FM
1.0
V
T
J
= 25
o
C, I
FM
= 4A
I
RM
5
μA
T
J
= 25
o
C, 100% V
RRM
V
RRM
50 to 800
V
Forward Conduction
Voltage
Code
V
, max repetitive
peak rev. voltage
T
J
= T
J
max.
V
50
100
200
400
600
800
V
RMS
, max RMS
voltage
T
J
= T
J
max.
V
35
70
140
280
420
560
I
max.
@ rated V
RRM
T
J
= 25°C
μA
5
5
5
5
5
5
I
max.
@ rated V
T
J
= 150°C
μA
400
400
400
400
400
400
Type number
4GBU
4GBU...F
005
01
02
04
06
08
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBU
Unit
Conditions
T
J
T
stg
R
thJC
Operating and storage
temperature range
-55 to 150
o
C
Max. thermal resistance
junction to case
4.2
°C/ W
DC rated current through bridge (1)
R
thJA
Thermal resistance,
junction to ambient
Approximate weight
22
°C/ W
DC rated current through bridge (1)
W
4 (0.14)
g (oz)
T
Mounting Torque
1.0
9.0
Nm
Lb.in
Bridge to Heatsink
Thermal and Mechanical Specifications
Parameters
4GBU
Unit
Conditions
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum
heat transfer and bolt down using 3mm screw
相關(guān)PDF資料
PDF描述
4G Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
2H Optoelectronic
4K Optoelectronic
4C Optoelectronic
4K042101 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
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