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參數(shù)資料
| 型號(hào)： | 4GBL005 |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 50V橋一丁內(nèi)酯包 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | 4GBL005 |
4GBL Series
Bulletin I2716 rev. E 05/02
2
www.irf.com
I
O
Maximum DC output current
4
A
T
C
= 50°C, Resistive & inductive load
T
C
= 50°C, Capacitive oad
t = 10ms, 20ms
3.2
150
I
FSM
Maximum peak, one-cycle
non-repetitive surge current,
following any rated oad condition
and with rated V
RRM
reapplied
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse eakage
curren t per diode
Maximum repetitive peak
reverse voltage range
158
t = 8.3ms, 16.7ms
T
J
= 150°C
I
2
t
113
104
A
2
s
t = 10ms
t = 8.3ms
V
FM
1.1
V
T
J
= 25
o
C, I
FM
= 4A
I
RM
5
μA
T
J
= 25
o
C, 100% V
RRM
V
RRM
50 to 800
V
Forward Conduction
Voltage
Code
V
, max repetitive
peak rev. voltage
T
J
= T
J
max.
V
50
100
200
400
600
800
V
RMS
, maximum
T
J
= T
J
max.
V
35
70
140
280
420
560
I
max.
@ rated V
RRM
T
J
= 25°C
μA
5
5
5
5
5
5
I
max.
@ rated V
T
J
= 150°C
μA
400
400
400
400
400
400
Type number
4GBL
005
01
02
04
06
08
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters
4GBL
Unit
Conditions
T
J
T
stg
R
thJC
Operating and storage
temperature range
-55 to 150
o
C
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
6.5
°C/ W
DC rated current through bridge (1)
R
thJA
22
°C/ W
DC rated current through bridge (1)
W
2 (0.07)
g (oz)
Thermal and Mechanical Specifications
Parameters
4GBL
Unit
Conditions
Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate
相關(guān)PDF資料 |
PDF描述 |
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| 4GBU005 | 50V Bridge in a GBU package |
| 4GBU01 | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4GBU02 | 200V Bridge in a GBU package |
| 4GBU04 | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 4GBU06 | 600V Bridge in a GBU package |
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