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參數(shù)資料
| 型號(hào)： | 4AM11 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁(yè)溝道功率MOSFET的陣列） |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 4AM11 |
4AM11
4
6
4
2
0
50
100
150
Ambient Temperature Ta (°C)
Channel
Dissipation
Pch
(W)
5
3
1
125
75
25
Condition : Channel Dissipation of
each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
30
20
10
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
125
75
25
Condition : Channel Dissipation
of each die is identical
Maximum Channel Dissipation Curve
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
–50
–10
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
(P-Channel)
–20
–5
–0.1
–0.05
–0.3
–1.0
–3
–10
–30
–100
–1.0
–2
–0.2
–0.5
–0.1
Ta = 25°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(T
C =
25°C)
Operation
in
this
area
is
limited
by
R
DS
(on)
Pch
50
10
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
(N-Channel)
20
5
0.1
0.05
0.3
1.0
3
10
30
100
1.0
2
0.2
0.5
0.1
Ta = 25°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(T
C =
25°C)
Operation
in
this
area
is
limited
by
R
DS
(on)
Nch
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