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參數(shù)資料
| 型號： | 4AE11 |
| 英文描述： | Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
| 中文描述： | 晶體管|晶體管|陣|達林頓| 300V五（巴西）總裁| 300mA的一（c）|園區(qū) |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 51K |
| 代理商： | 4AE11 |
4AE11
3
0
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
50
100
150
20
60
40
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Collector to emitter voltage V
CE
(V)
C
C
0
Typical Output Characteristics (NPN)
1
2
3
4
5
100
200
300
400
500
T
C
= 25
°
C
I
B
= 0
10
μ
A
20
30
40
50
60
70
100
10
20
50
100
200
500
1,000
2,000
5,000
10,000
Collector current I
C
(mA)
D
F
1
2
5
10 20
50 100200 500 1,000
DC Current Transfer Ratio
vs. Collector Current (NPN)
T
C
=75
°
C
–25
°
C
25
°
C
V
= 1.5 V
Pulse
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相關代理商/技術參數(shù) |
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|---|---|
| 4AE12 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor Arrays |
| 4AEGBW5500A3LJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS,50UF,450V,5%,37.5MM,BULK - Boxed Product (Development Kits) |
| 4AEGBW6100A3NJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
| 4AEJBW5300A3LJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
| 4AEJBW5500A3NJ | 制造商:KEMET Corporation 功能描述:BOX CAP,DC-LINK APPLICATIONS - Boxed Product (Development Kits) |
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