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參數(shù)資料
| 型號： | 4AC13 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 53K |
| 代理商： | 4AC13 |
4AC13
2
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
5A
Collector peak current
I
C(peak)
10
A
Diode current
I
D
5A
Collector power dissipation
P
C*
1
4W
P
C*
1 (T
C = 25°C)
28
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. 4 devices operation.
Electrical Characteristics (for each device, Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CBO
50
—
V
I
C = 1 mA, IE = 0
Collector to emitter sustain
voltage
V
CEO(SUS)
50
—
70
V
I
C = 2 A, L = 10 mH, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
—
10
A
V
CB = 40 V, IE = 0
I
CEO
——
10
V
CE = 40 V, RBE = ∞
DC current transfer ratio
h
FE
2000
—
20000
V
CE = 2 V, IC = 3 A*
1
h
FE
1000
—
V
CE = 2 V, IC = 5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.5
V
I
C = 3 A, IB = 3 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
2.0
V
I
C = 3 A, IB = 3 mA*
1
C to E diode forward current
V
D
—
3.5
V
I
D = 5 A
Note:
1. Pulse test.
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