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參數(shù)資料
| 型號(hào)： | 4AC13 |
| 英文描述： | TRANSISTOR | BJT | ARRAY | COMM EMITTER | 50V V(BR)CEO | 5A I(C) | SIP |
| 中文描述： | 晶體管|晶體管|陣|通訊發(fā)射器| 50V五（巴西）總裁| 5A條一（c）|園區(qū) |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 53K |
| 代理商： | 4AC13 |
4AC13
2
Absolute Maximum Ratings
(for each device, Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
D
P
C
*
P
C
*
Tj
50
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector current
5
A
Collector peak current
10
A
Diode current
5
A
Collector power dissipation
1
4
W
1
(T
C
= 25°C)
28
Junction temperature
150
°C
Storage temperature
Note:
1. 4 devices operation.
Tstg
–55 to +150
°C
Electrical Characteristics
(for each device, Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CBO
50
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter sustain
voltage
V
CEO(SUS)
50
—
70
V
I
C
= 2 A, L = 10 mH, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
h
FE
V
CE(sat)
—
—
10
μA
V
CB
= 40 V, I
E
= 0
V
CE
= 40 V, R
BE
=
∞
V
CE
= 2 V, I
C
= 3 A*
V
CE
= 2 V, I
C
= 5 A*
I
C
= 3 A, I
B
= 3 mA*
—
—
10
DC current transfer ratio
2000
—
20000
1
1000
—
—
1
Collector to emitter saturation
voltage
—
—
1.5
V
1
Base to emitter saturation
voltage
V
BE(sat)
—
—
2.0
V
I
C
= 3 A, I
B
= 3 mA*
1
C to E diode forward current
Note:
1. Pulse test.
V
D
—
—
3.5
V
I
D
= 5 A
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