參數(shù)資料
型號: 45DB011B
廠商: Atmel Corp.
英文描述: 1-Megabit 2.7-volt Only Serial DataFlash
中文描述: 1兆位2.7伏,只有序列的DataFlash
文件頁數(shù): 9/19頁
文件大?。?/td> 150K
代理商: 45DB011B
AT45DB011
17
Figure 2. Algorithm for Randomly Modifying Data
Notes:
1.
To preserve data integrity, each page of a DataFlash
sector must be updated/rewritten at least once
within every 10,000 cumulative page erase/program
operations within that sector.
2.
A Page Address Pointer must be maintained to indi-
cate which page is to be rewritten. The Auto Page
Rewrite command must use the address specified
by the Page Address Pointer.
3.
Other algorithms can be used to rewrite portions of
the Flash array. Low power applications may choose
to wait until 10,000 cumulative page erase/program
operations have accumulated before rewriting all
pages of the sector. See application note AN-4
(“Using Atmel’s Serial DataFlash”) for more details.
START
MAIN MEMORY PAGE
to BUFFER TRANSFER
(53H)
INCREMENT PAGE
ADDRESS POINTER
(2)
Auto Page Rewrite
(2)
(58H)
END
provide address of
page to modify
If planning to modify multiple
bytes currently stored within
a page of the Flash array
MAIN MEMORY PAGE PROGRAM
(82H)
BUFFER WRITE
(84H)
BUFFER to MAIN
MEMORY PAGE PROGRAM
(83H)
Sector Addressing
PA8
PA7
PA6
PA5
PA4
PA3
PA2-
PA0
Sector
00
0
X
0
X
XXX
X
1
X
XXX
X
2
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