- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄33698 > 41LV16100B-50TL (Integrated Silicon Solution, Inc.) 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE PDF資料下載
參數(shù)資料
| 型號(hào)： | 41LV16100B-50TL |
| 廠(chǎng)商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬(wàn)× 16（16兆）動(dòng)態(tài)與江戶(hù)頁(yè)面模式內(nèi)存 |
| 文件頁(yè)數(shù)： | 16/22頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | 41LV16100B-50TL |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. B
04/13/05
ISSI
TRUTH TABLE
Function
RAS
LCAS
LCAS UCAS
UCAS
WE
OE
Address tR/tC
I/O
Standby
H
X
High-Z
Read: Word
L
H
L
ROW/COL
DOUT
Read: Lower Byte
L
H
L
ROW/COL
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
X
ROW/COL
DIN
Write: Lower Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
Read-Write(1,2)
LL
L
H
→LL→H
ROW/COL
DOUT, DIN
EDO Page-Mode Read(2) 1st Cycle:
L
H
→LH→L
H
L
ROW/COL
DOUT
2nd Cycle:
L
H
→LH→L
H
L
NA/COL
DOUT
Any Cycle:
L
→HL→H
H
L
NA/NA
DOUT
EDO Page-Mode Write(1) 1st Cycle:
L
H
→LH→L
L
X
ROW/COL
DIN
2nd Cycle:
L
H
→LH→L
L
X
NA/COL
DIN
EDO Page-Mode(1,2)
1st Cycle:
L
H
→LH→LH→LL→H
ROW/COL
DOUT, DIN
Read-Write
2nd Cycle:
L
H
→LH→LH→LL→H
NA/COL
DOUT, DIN
Hidden Refresh
Read(2)
L
→H→L
L
H
L
ROW/COL
DOUT
Write(1,3)
L
→H→L
L
X
ROW/COL
DOUT
RAS-Only Refresh
L
H
X
ROW/NA
High-Z
CBR Refresh(4)
H
→L
L
X
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two
CAS signals must be active (LCAS or UCAS).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 41LV16100B-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 41LV16100B-50TLI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60K | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KL | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KLI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。