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參數(shù)資料
| 型號： | 3SK322 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 3SK322 |
3SK322
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
12
V
Gate 1 to source voltage
±8
V
Gate 2 to source voltage
±8
V
Drain current
25
mA
Channel power dissipation
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Tstg
–55 to +150
°C
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| 3SK323 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier |
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