- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358643 > 3SK290 (Hitachi,Ltd.) Silicon N-Channel Dual Gate MOS FET PDF資料下載
參數(shù)資料
| 型號： | 3SK290 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 3SK290 |
3SK290
4
200
150
100
50
0
50
100
150
200
C
Ambient Temperature Ta (
C)
Maximum Channel Power
Dissipation Curve
20
16
12
8
4
0
2
4
6
8
10
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
1.0 V
0.8 V
0.4 V
1.2 V
0.6 V
V = 3 V
V = 0.2V
20
16
12
8
4
0
Gate 1 to Source Voltage V (V)
D
D
Drain Current vs.
Gate 1 to Source Voltage
V = 1.0 V
3.0 V
2.5 V
2.0 V
1.5 V
V = 6 V
0.8
1.6
2.4
3.2
4.0
20
16
12
8
4
0
Gate 2 to Source Voltage V (V)
D
D
Drain Current vs.
Gate 2 to Source Voltage
4.0
3.2
2.4
1.6
0.8
2.5 V
2.0 V
1.0 V
V = 6 V
V = 0.5 V
3.0 V
1.5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK291 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
| 3SK292 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) |
| 3SK293 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICAITONS) |
| 3SK294 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) |
| 3SK295 | Silicon N-Channel Dual Gate MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK291 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
| 3SK291(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R 制造商:Toshiba America Electronic Components 功能描述:HF MOSFET N-ch 12.5V 0.03A UHF SMQ4 |
| 3SK291_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TV Tuner, UHF RF Amplifier Applications |
| 3SK292 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS) |
| 3SK292(TE85R,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。