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參數(shù)資料
| 型號(hào)： | 3SK254 |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門(mén)MOSFET) |
| 中文描述： | N溝道硅雙柵MOSFET（應(yīng)用于射頻放大器的? MOSFET的溝道雙門(mén)） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 3SK254 |
3SK254
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown Voltage
BV
DSX
18
V
V
G1S
= V
G2S
= –2 V, I
D
= 10
μ
A
Drain Current
I
DSX
0.1
5.0
mA
V
DS
= 3.5 V, V
G2S
= 3 V, V
G1S
= 0.5 V
Gate1 to Source Cutoff Voltage
V
G1S(off)
–1.0
0
+1.0
V
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 10
μ
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
0
0.5
1.0
V
V
DS
= 3.5 V, V
G1S
= 3 V, I
D
= 10
μ
A
Gate1 Reverse Current
I
G1SS
±
20
nA
V
DS
= 0, V
G2S
= 0, V
G1S
=
±
6 V
Gate2 Reverse Current
I
G2SS
±
20
nA
V
DS
= 0, V
G1S
= 0, V
G2S
=
±
6 V
Forward Transfer Admittance
|y
fs
|
14
18
23
mS
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 kHz
Input Capacitance
C
iss
2.4
2.9
3.4
pF
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 MHz
Output Capacitance
C
oss
0.9
1.2
1.5
pF
Reverse Transfer Capacitance
C
rss
0.01
0.03
pF
Power Gain
G
ps
16
19
22
dB
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 470 MHz
Noise Figure 1
NF1
2.0
3.0
dB
Noise Figure 2
NF2
0.8
2.3
dB
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 55 MHz
I
DSX
Classification
Rank
U1E
Marking
U1E
I
DSX
(mA)
0.1 to 0.5
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參數(shù)描述 |
|---|---|
| 3SK254(NE93218) | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Discrete |
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| 3SK255(NE93318) | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:Discrete |
| 3SK256 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS) |
| 3SK257 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER, VHF, UHF RF AMPLIFIER APPLICATIONS) |
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