參數(shù)資料
型號: 3SK224
廠商: NEC Corp.
英文描述: N-Channel Silicon Dual-Gate MOSFET(應(yīng)用于RF放大器的N溝道雙門MOSFET)
中文描述: N溝道硅雙柵MOSFET(應(yīng)用于射頻放大器的? MOSFET的溝道雙門)
文件頁數(shù): 2/6頁
文件大?。?/td> 47K
代理商: 3SK224
3SK224
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source Breakdown
Voltage
BV
DSX
18
V
V
G1S
= V
G2S
= –2 V, I
D
= 10
μ
A
Drain Current
I
DSX
0.5
15.0
mA
V
DS
= 6 V, V
G2S
= 3 V, V
G1S
= 0.5 V
Gate1 to Source Cutoff
Voltage
V
G1S(off)
–1.5
+0.5
V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
μ
A
Gate2 to Source Cutoff
Voltage
V
G2S(off)
–1.0
+1.0
V
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
μ
A
Gate1 Reverse Current
I
G1SS
±
20
nA
V
DS
= 0, V
G2S
= 0, V
G1S
=
±
8 V
Gate2 Reverse Current
I
G2SS
±
20
nA
V
DS
= 0, V
G1S
= 0, V
G2S
=
±
8 V
Forward Transfer
Admittance
|y
fs
|
18
22
mS
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
C
iss
1.2
1.7
2.2
pF
Output Capacitance
C
DSS
0.5
0.9
1.2
pF
Reverse Transfer
Capacitance
C
rss
0.015
0.025
pF
Power Gain
G
PS
15.0
17.0
dB
Noise Figure
NF
1.8
2.5
dB
I
DSX
Classification
Class
U94/UID
*
U95/UIE
*
Marking
U94
U95
I
DSX
(mA)
0.5 to 7.0
5.0 to 15.0
*
Old Specification/New Specification
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltage or fields.
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 900 MHz
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