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參數(shù)資料
| 型號： | 3SK135A |
| 廠商： | NEC Corp. |
| 英文描述： | RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
| 中文描述： | 射頻放大器。超高頻電視調(diào)諧器N溝道硅片雙柵MOS場效應(yīng)晶體管4芯微型模具 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 3SK135A |
3SK135A
2
TYPICAL CHARACTERISTICS (T
A
= 25 C)
25
20
10
0
–1.0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
6 V
V
DS
– Drain to Source Voltage – V
|
f
V
G2S
= 4 V
0
+1.0
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
V
DS
= 10 V
f = 1 MHz
V
G1S
– Gate1 to Source Voltage – V
10
20
5
4
3
2
1
I
D
V
G1S
= 0
–0.1 V
–0.2 V
–0.3 V
–0.4 V
15
5
4 V
2 V
1 V
V
G2S
= 0
2
1
0
–1.0
C
o
1.0
4.0
OUTPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
V
DS
= 10 V
f = 1 MHz
V
G2S
– Gate2 to Source Voltage – V
0
2.0
3.0
I
D
= 5 mA at V
G2S
= 4 V
25
20
10
0
–1.0
6 V
|
D
0
+1.0
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
V
DS
= 10 V
V
G1S
– Gate1 to Source Voltage – V
15
5
4 V
2 V
1 V
V
G2S
= 0
4
2
0
–1.0
C
i
1.0
4.0
INPUT CAPACITANCE vs.
DRAIN CURRENT
V
DS
= 10 V
f = 1 MHz
I
D
– Drain Current – mA
0
2.0
3.0
I
D
= 5 mA at V
G2S
= 4 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – C
50
125
400
200
0
P
T
300
100
100
75
25
I
D
= 10 mA at V
G2S
= 4 V
I
D
= 10 mA at V
G2S
= 4 V
3
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK135A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
| 3SK136 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 3SK137 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 3SK137V | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 3SK138 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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