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參數(shù)資料
| 型號： | 3P4MH |
| 廠商： | NEC Corp. |
| 英文描述： | THYRISTORS |
| 中文描述： | 晶閘管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 178K |
| 代理商： | 3P4MH |
Data Sheet D13533EJ3V0DS
2
3P4MH, 3P6MH
ELECTRICAL CHARACTERISTICS (T
j
= 25
°
C, R
GK
= 1 k
)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN.
TYP.
MAX.
T
j
= 25
°
C
100
μ
A
Repeat peak reverse
current
I
RRM
V
RM
= V
RRM
T
j
= 125
°
C
2
mA
T
j
= 25
°
C
100
μ
A
Repeat peak off-current
I
DRM
V
DM
= V
DRM
T
j
= 125
°
C
2
mA
Critical rate-of-rise of off-
state voltage
dV/dt
T
j
= 125
°
C, V
DM
=
2
3
V
DRM
3
V/
μ
s
On-state voltage
V
TM
I
T
= 10 A
1.6
V
Refer to Figure 1.
Gate trigger current
I
GT
V
DM
= 6 V, R
L
= 100
0.2
mA
Refer to Figure 14.
Gate trigger voltage
V
GT
V
DM
= 6 V, R
L
= 100
0.8
V
Gate non-trigger voltage
V
GD
T
j
= 125
°
C,
V
DM
= V
DRM
2
0.2
V
Holding current
I
H
V
DM
= 24 V, I
TM
= 10 A
1
5
mA
Commutating turn-off time
T
q
T
j
= 125
°
C,
I
T
= 3 A, di
R
/dt = 15 A/
μ
s
V
R
≥
25 V, V
DM
=
3
V
DRM
dV
D
/dt = 1 V/
μ
s
80
μ
s
R
th(j-c)
Junction-to-case DC
8
°
C/W
Refer to Figure 13.
Thermal resistance
R
th(j-a)
Junction-to-ambient DC
75
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
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