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參數(shù)資料
| 型號(hào)： | 3N164 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V,最大導(dǎo)通電阻300Ω的P溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓- 30V時(shí)，最大導(dǎo)通電阻300Ω的P溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 3N164 |
3N163/3N164
2
Siliconix
P-37404—Rev. D, 04-Jul-94
3N163
3N164
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= –10 A, V
DS
= 0 V
–70
–40
–30
Source-Drain Breakdown Voltage
V
(BR)SDS
I
S
= –10 A, V
GD
= V
BD
= 0 V
–70
–40
–30
V
Gate-Threshold Voltage
V
GS(th)
I
D
= –10 A, V
GS
= V
DS
–2.5
–2
–5
–2
–5
Gate-Source Voltage
V
GS
I
D
= –0.5 mA, V
DS
= –15 V
–3.5
–3
–6.5
–2.5
–6.5
V
GS
= –40 V, V
DS
= 0 V
<–1
–10
Gate Body Leakage
Gate-Body Leakage
I
GSS
T
A
= 125 C
d
–1
V
GS
= –30 V, V
DS
= 0 V
<–1
–10
pA
T
A
= 125 C
d
–1
Zero Gate Voltage Drain Current
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= –15 V, V
GS
= 0 V
–8
–200
–400
T
A
= 125 C
d
–20
nA
Zero Gate Voltage Source Current
Zero-Gate Voltage Source Current
I
SDS
V
GD
= V
BD
= 0 V, V
SD
= –20 V
–10
–400
–800
pA
T
A
= 125 C
d
–25
nA
On-State Drain Current
c
I
D(on)
V
DS
= –15 V, V
GS
= –10 V
–10
–5
–30
–3
–30
mA
Drain Source On Resistance
Drain-Source On-Resistance
r
DS(on)
V
GS
= –20 V, I
D
= –100 A
180
250
300
T
A
= 125 C
d
270
Dynamic
Forward Transconductance
c
g
fs
V
DS
= –15 V, I
D
= –10 mA
f = 1 kHz
2.7
2
4
1
4
mS
Common-Source Output Conductance
c
g
os
150
250
250
S
Input Capacitance
C
iss
V
DS
= –15 V I
D
= –10
f = 1 MHz
A
2.4
3.5
3.5
Output Capacitance
C
oss
2.5
3
3
pF
Reverse Transfer Capacitance
C
rss
0.5
0.7
0.7
Switching
e
Turn On Time
Turn-On Time
t
d(on)
= –15 V, R
V
DD
= 15 V, R
L
= 1500
I
D
–10 mA, V
GEN
= –12 V
R
G
= 50
5
12
12
t
r
13
24
24
ns
Turn-Off Time
t
d(off)
25
50
50
Notes:
a.
b.
c.
d.
e.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
Switching time is essentially independent of operating temperature.
MRA
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