參數(shù)資料
型號(hào)： 3MBI150UC-120
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： 1200V / 150A 3 in one-package
中文描述： 200 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-39
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 136K
代理商： 3MBI150UC-120
3MBI150UC-120
IGBT Module U-Series
1200V / 150A 3 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
· With shunt resistors
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
Shunt resistance
I
CES
I
GES
V
GE(th)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(chip)
t
rr
R lead
R shunt
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.5
1.75
2.00
17
0.36
0.21
0.03
0.37
0.07
1.60
1.70
–
5.1
2.4
1.0
200
8.5
2.10
–
–
1.20
0.60
–
1.00
0.30
1.90
–
0.35
–
–
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=150mA
V
GE
=15V, I
C
=150A
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=±15V
R
G
=2.2
V
GE
=0V
I
F
=150A
I
F
=150A
Without shunt resistance
Resistance of R1 to R6 *4
mA
nA
V
V
nF
μs
V
μs
m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Items Symbols
Thermal resistance
Contact Thermal resistance
–
–
–
–
–
0.05
0.17
0.28
–
IGBT
FWD
With thermal compound
°C/W
°C/W
°C/W
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : 2.5 to 3.5 N·m(M5)
Conditions
Characteristics Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*
5
*
5
:
This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*3: Biggest internal terminal resistance among arm.
*4 R1 to R2 is shown in equivalent circuit (p5)
Conditions
Characteristics Unit
Min.
Typ.
Max.
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
iso
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage
between terminal and copper base *1
Screw Torque Mounting *
2
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
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