參數(shù)資料
型號: 3KASMC43HE3/9AT
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 77K
代理商: 3KASMC43HE3/9AT
3KASMC10 thru 3KASMC43A
Vishay General Semiconductor
Document Number: 88480
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
New Product
Surface Mount PAR
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
FEATURES
Junction passivation optimized design
passivated anisotropic rectifier technology
T
J
= 185 °C capability suitable for high
reliability and automotive requirement
Available in uni-directional polarity only
3000 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
(2)
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
10 V to 43 V
3000 W
6.0 W
200 A
185 °C
DO-214AB (SMC)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 3)
Peak power pulse current with a 10/1000 μs waveform
(1)
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
SYMBOL
VALUE
UNIT
P
PPM
I
PPM
I
FSM
P
D
V
F
T
J
, T
STG
3000
W
See next table
A
200
A
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 6)
Maximum instantaneous forward voltage at 100 A
(2)
6.0
W
3.5
V
Operating junction and storage temperature range
- 65 to + 185
°C
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