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參數(shù)資料
| 型號： | 3KASMC36AE3/9AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 88K |
| 代理商： | 3KASMC36AE3/9AT |
Document Number 88480
29-Jun-06
www.vishay.com
3
3KASMC10 thru 3KASMC43A
Vishay General Semiconductor
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°
C unless otherwise noted)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance junction to ambient air
(1)
SYMBOL
VALUE
UNIT
R
θ
JA
R
θ
JL
77.5
°C/W
Thermal resistance Junction to leads
18.3
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
3KASMC10AHE3/57T
0.211
57T
850
7" Diameter Plastic Tape & Reel
3KASMC10AHE3/9AT
0.211
9AT
3500
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
0.1
1
10
100
0.1
1
10
100
1000
10000
P
P
w
e
W
)
td - P
u
lse
W
idth (
μ
s)
0
25
50
75
100
0
50
T
J
- Initial Temperat
u
re (°C)
100
150
200
P
u
l
w
e
P
)
u
r
P
)
D
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
tr = 10
μ
sec
Peak
V
al
u
e
I
PPM
Half
V
al
u
e -
I
PPM
I
PP
2
10/1000
μ
sec
W
a
v
eform
as defined
b
y R.E.A.
T
j
= 25 °C
P
u
lse
W
idth (td)
is defined as the point
w
here the peak c
u
rrent
decays to 50 % of I
PPM
I
P
u
l
u
r
R
t - Time (ms)
100
1000
10000
10
20
30
40
50
C
J
u
n
V
w
m
- Re
v
erse Stand-off
V
oltage (
V
)
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 m
V
p-p
Meas
u
red at
Zero Bias
Meas
u
red at
Stand-off
V
oltage
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| 3KASMC36E3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43E3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC43-HE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC10A-HE3/57T | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 3KASMC10HE3/9AT | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3KASMC36AHE3/57/T | 制造商:Vishay 功能描述:Tape and reel Rohs Compliant |
| 3KASMC36AHE3/57T | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 3.0KW 36V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC36AHE3/9AT | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 3000W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 3KASMC36AHE3\57T | 制造商:Vishay Semiconductors 功能描述:DIODE, TVS, UNIDIR, 6W, 36V, DO-214AB, TVS Polarity:Unidirectional, Reverse Stand-Off Voltage Vrwm:36V, Breakdown Voltage Min:40V, Breakdown Voltage Max:44.2V, Clamping Voltage Vc Max:58.1V, Peak Pulse Current Ippm:51.6A , RoHS Compliant: Yes |
| 3KASMC36AHE3_A/H | 制造商:Vishay Intertechnologies 功能描述:3.0KW,36V 5%,SMC PAR |
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