參數(shù)資料
型號(hào): 39LF020
廠(chǎng)商: Silicon Storage Technology, Inc.
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 10Vz 20mA-Izt 0.05 3uA-Ir 8 SOT-363 3K/REEL
中文描述: 512千位/ 1兆位/ 2兆/ 4兆位(× 8)多用途閃光
文件頁(yè)數(shù): 9/24頁(yè)
文件大?。?/td> 284K
代理商: 39LF020
Data Sheet
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
9
2001 Silicon Storage Technology, Inc.
S71150-03-000
6/01
395
AC CHARACTERISTICS
TABLE
9: R
EAD
C
YCLE
T
IMING
P
ARAMETERS
V
DD
= 3.0-3.6V
FOR
SST39LF512/010/020/040
AND
2.7-3.6V
FOR
SST39VF512/010/020/040
Symbol Parameter
T
RC
Read Cycle Time
T
CE
Chip Enable Access Time
T
AA
Address Access Time
T
OE
Output Enable Access Time
T
CLZ1
CE# Low to Active Output
T
OLZ1
OE# Low to Active Output
T
CHZ1
CE# High to High-Z Output
T
OHZ1
OE# High to High-Z Output
T
OH1
Output Hold from Address Change
SST39LF512-45
SST39LF010-45
SST39LF020-45
SST39LF040-45
Min
45
SST39LF020-55
SST39LF040-55
Min
55
SST39VF512-70
SST39VF010-70
SST39VF020-70
SST39VF040-70
Min
70
SST39VF512-90
SST39VF010-90
SST39VF020-90
SST39VF040-90
Min
90
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
Max
Max
45
45
30
55
55
30
70
70
35
90
90
45
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
0
0
0
0
15
15
15
15
25
25
30
30
0
0
0
0
T9.2 395
TABLE 10: P
ROGRAM
/E
RASE
C
YCLE
T
IMING
P
ARAMETERS
Symbol
T
BP
T
AS
T
AH
T
CS
T
CH
T
OES
T
OEH
T
CP
T
WP
T
WPH1
T
CPH1
T
DS
T
DH1
T
IDA1
T
SE
T
SCE
Parameter
Byte-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Chip-Erase
Min
Max
20
Units
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
0
30
0
0
0
10
40
40
30
30
40
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
150
25
100
T10.1 395
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