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參數(shù)資料
| 型號： | 386M-E1 |
| 廠商： | BCD Semiconductor Manufacturing Limited |
| 英文描述： | LOW VOLTAGE AUDIO POWER AMPLIFIER |
| 中文描述： | 低壓音頻功率放大器 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 175K |
| 代理商： | 386M-E1 |
LOW VOLTAGE AUDIO POWER AMPLIFIER
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
AZ386
Parameter
Symbol
V
CC
Value
18
Unit
Power Supply Voltage
V
Package Dissipation (Note 2)
P
D
AZ386P
AZ386M
1.25
0.73
W
W
Input Voltage
V
IN
T
J
-0.4 to 0.4
V
Junction Temperature
150
o
C
Storage Temperature Range
T
STG
-55 to 150
o
C
Soldering Information
DIP-8 Soldering
(10 sec.)
SOIC-8 (15 sec.)
DIP-8
SOIC-8
260
o
C
215
107
172
Thermal Resistance
θ
JA
o
C/W
Absolute Maximum Ratings (Note 1)
Parameter
Min
Max
Unit
Operating Temperature Range
0
70
o
C
Recommended Operating Conditions
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings" for extended periods may affect device reliability.
Note 2: For operation in ambient temperatures (T
A
) above 25
o
C, the device must be derated based on a 150
o
C
maximum junction temperature and 1) a thermal resistance of 107
o
C/W junction to ambient for the Dual-in-Line
package and 2) a thermal resistance of 172
o
C/W for the small outline package.
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