參數(shù)資料
型號(hào): 36MB10A
廠商: VISHAY SEMICONDUCTORS
元件分類(lèi): 激光器
英文描述: DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
中文描述: Bridge Rectifiers 100 Volt 35 Amp
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 86K
代理商: 36MB10A
MB Series
4
Bulletin I2715 rev. G 08/01
www.irf.com
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Te
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
M
Instantaneous Forward Voltage (V)
I
50
70
90
110
130
150
0
5
10
15
20
25
30
180
(Rect)
180
(Sine)
26MB..A Series
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
26MB..A Series
Tj = 25
C
Tj = 150
C
Average Forward Current (A)
M
Maximum Allowable Ambient Temperature (°C)
0
25
25
50
75
100
125
150
2KW
3KW
4KW
5 K/W
7 K/W
10 K/W
RhSA=1KW-DetaR
0
0
0
0
0
0
0
5
10
15
20
180
(Sine)
26MB..A Series
Tj = 150
C
180
(Rect)
Number of Equal Amplitude Half Cycle Current Pulses (N)
P
50
150
250
350
450
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
26MB..A Series
Initial Tj = 150
C
No Voltage Reapplied
Rated Vrrm Reapplied
P
Pulse Train Duration (s)
100
150
200
250
300
350
400
1
10
100
26MB..A series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge
Initial Tj = 150
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
相關(guān)PDF資料
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