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參數(shù)資料
| 型號： | 33LV408 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | 4 Megabit (512K x 8-Bit) CMOS SRAM |
| 中文描述： | 4兆位（為512k × 8位）的CMOS的SRAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 33LV408 |
M
3
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512K x 8-Bit) CMOS SRAM
33LV408
04.02.04 REV 2
T
ABLE
4. 33LV408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3 + 10%, T
A
= -55
TO
+125
°
C,
UNLESS
OTHERWISE
NOTED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
Ground
Input High Voltage
1
Input Low Voltage
2
Thermal Impedance
Weight
V
CC
V
SS
V
IH
V
IL
Θ
JC
3.0
0
2.2
-0.3
--
3.6
0
V
V
V
V
1. V
IH
(max) = V
CC
+2.0V ac (pulse width < 10 ns) for I < 20 mA
2.
V
IL
(mn) = -2.0V ac(pulse width < 10 ns) for I < 20 mA
V
CC
+0.3
0.8
1.21
12
°C/W
Grams
T
ABLE
5. 33LV408 C
APACITANCE
(f = 1.0 MH
Z
, V
CC
= 3.3 V, T
A
= 25
°
C)
P
ARAMETER
S
YMBOL
T
EST
C
ONDITIONS
M
AX
U
NITS
Input Capacitance
1
CS1 - CS4,
OE, WE
I/O0-7, I/O8-15, I/O16-23, I/O24-31
Input / Output Capacitance
1
1. Guaranteed by design.
C
IN
V
IN
= 0 V
7
28
7
8
pF
C
OUT
V
I/O
= 0 V
pF
T
ABLE
6. 33LV408 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V + 10%, T
A
= -55
TO
+125
°
C,
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
C
ONDITION
S
UBGROUPS
M
IN
M
AX
U
NIT
Input Leakage Current
I
LI
I
LO
V
IN
= V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
,
V
OUT
=V
SS
to V
CC
I
OL
= 8mA
I
OH
= -4mA
Mn cycle, 100% Duty, CS=V
IL
, I
OUT
=0mA,
V
IN
= V
IH
or V
IL
1, 2, 3
-2
2
μA
Output Leakage Current
1, 2, 3
-2
2
μA
Output Low Voltage
V
OL
V
OH
I
CC
1, 2, 3
--
0.4
V
Output High Voltage
1, 2, 3
2.4
--
V
Operating Current
-20
-25
-30
1, 2, 3
--
--
--
150
140
130
mA
Standby Power Supply
Current
I
SB
CS = V
IH
, Mn Cycle
1, 2, 3
--
60
mA
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