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參數(shù)資料
| 型號： | 2SK974(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 3A條（?。﹟對251AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK974(L) |
2SK970
R
r
500
200
100
50
20
10
5
0.5
1.0
Reverse Drain Current I
DR
(A)
5
50
10
2
20
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/
μ
s, Ta = 25°C
V
= 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
30
10
C
0
10
20
50
Drain to Source Voltage V
DS
(V)
30
100
40
V
= 0
f =1MHz
Ciss
Coss
Crss
100
80
60
40
20
0
4
12
16
Gate Charge Qg (nc)
8
20
16
12
8
4
0
Dynamic Input Characteristics
D
D
G
G
20
I
D
= 10 A
V
DS
V
GS
V
DD
= 50 V
25 V
10 V
25 V
10 V
V
DD
= 50 V
Switching Characteristics
S
500
200
100
50
20
10
5
0.1
0.2
0.5
1.0
2
10
Drain Current I
D
(A)
5
t
d (off)
t
f
t
r
t
d (on)
V
= 10 V
PW = 2
μ
s, duty < 1 %
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK974(S) | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK981 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK981A | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-221VAR |
| 2SK995 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SP5U5.2 | Analog IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK974L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK974S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK975 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK975-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS FOR GENERAL SWITCHING |
| 2SK975TZ-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,1.5A,0.3ohm,TO-92 Mod 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 1.5A 3-Pin TO-92 Mod T/R |
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