參數(shù)資料
型號(hào): 2SK875
元件分類: JFETs
英文描述: 12 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/6頁
文件大?。?/td> 3358K
代理商: 2SK875
Data Sheet D13332EJ3V0DS
4
2SK3109
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
0.4
0
100
50
Tch - Channel Temperature - C
0.6
0.2
VGS = 10 V
Pulsed
ID = 5 A
0.8
1.0
1.2
ID = 10 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
0.0
0.1
1
10
0.5
1.0
1.5
100
VGS = 10 V
0 V
Pulsed
2.0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
10000
1000
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
10
100
1000
1
10
100
VDD = 100 V
VGS = 10 V
RG = 10
td(off)
td(on)
tr
tf
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
0.1
10
1
10
100
di/dt = 50 A/
s
VGS = 0 V
1
1000
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
5
10
15
20
50
100
150
200
2
4
6
8
0
10
12
14
16
0
VGS
VDS
ID = 10 A
VDD = 160 V
100 V
40 V
相關(guān)PDF資料
PDF描述
2SK876 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
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