參數(shù)資料
型號: 2SK740
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 2/8頁
文件大小: 47K
代理商: 2SK740
2SK740
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
150
V
Gate to source voltage
±
20
V
Drain current
10
A
Drain peak current
40
A
Body to drain diode reverse drain current
10
A
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 5 A, V
GS
= 10 V *
1
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
250
V
GS(off)
R
DS(on)
2.0
4.0
V
Static drain to source on state
resistance
0.12
0.15
Forward transfer admittance
|y
fs
|
Ciss
4.0
7.0
S
I
D
= 5 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
1200
pF
Output capacitance
Coss
550
pF
Reverse transfer capacitance
Crss
85
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
20
ns
I
D
= 5 A, V
GS
= 10 V,
R
L
= 6
Rise time
50
ns
Turn-off delay time
70
ns
Fall time
40
ns
Body to drain diode forward
voltage
1.2
V
I
F
= 10 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
220
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/
μ
s
Note:
1. Pulse test
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