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參數(shù)資料
| 型號： | 2SK4115 |
| 廠商： | Toshiba Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 157K |
| 代理商： | 2SK4115 |
2SK4115
2007-07-24
2
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
30 V, V
DS
=
0 V
±
10
μ
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
=
±
10
μ
A, V
DS
=
0 V
±
30
V
Drain cutoff current
I
DSS
V
DS
=
720 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
900
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
3.5 A
1.6
2.0
Ω
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
3.5 A
3.5
5.0
S
Input capacitance
C
iss
1650
Reverse transfer capacitance
C
rss
30
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
140
pF
Rise time
t
r
50
Turn-on time
t
on
90
Fall time
t
f
70
Switching time
Turn-off time
t
off
240
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
45
Gate-source charge
Q
gs
24
Gate-drain (“Miller”) charge
Q
gd
V
DD
～
400 V, V
GS
=
10 V, I
D
=
7 A
21
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
7
A
Pulse drain reverse current
(Note 1)
I
DRP
21
A
Forward voltage (diode)
V
DSF
I
DR
=
7 A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1400
ns
Reverse recovery charge
Q
rr
I
DR
=
7 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
12
μ
C
Marking
Duty
<
1%, t
w
=
10
μ
s
0 V
10
V
V
GS
R
L
=
114
Ω
V
DD
～
400 V
I
D
=
3.5
A
V
OUT
5
Ω
K4115
TOSHIBA
Lot No.
A line indicates
Lead (Pb)-Free
Part No. (or abbreviation code)
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| 2SK4117LS | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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